Low-pressure organometallic epitaxy of the III–V compounds
- 31 December 1989
- journal article
- review article
- Published by Elsevier in Progress in Solid State Chemistry
- Vol. 19 (2) , 111-164
- https://doi.org/10.1016/0079-6786(89)90007-1
Abstract
No abstract availableKeywords
This publication has 100 references indexed in Scilit:
- A parametric investigation of GaAs epitaxial growth uniformity in a high speed, rotating-disk MOCVD reactorJournal of Crystal Growth, 1988
- Immiscible growth of In1−xGaxP in low-vacuum MOVPEJournal of Crystal Growth, 1988
- Elementary processes and rate-limiting factors in MOVPE of GaAsJournal of Crystal Growth, 1988
- Growth kinetic study in GaAs molecular layer epitaxy in TMG/AsH3 systemJournal of Crystal Growth, 1988
- Gas phase and surface reactions in the MOCVD of GaAs from triethylgallium, trimethylgallium, and tertiarybutylarsineJournal of Crystal Growth, 1988
- The control and modeling of doping profiles and transients in MOVPE growthJournal of Crystal Growth, 1988
- The influence of hydrocarbons in MOVPE GaAs growth: Improved detection of carbon by secondary ion mass spectroscopyJournal of Crystal Growth, 1988
- Controlled uniform growth of GaInAsP/InP structures for laser application on 2 inch wafers by LP-MOVPE at 20 mbarJournal of Crystal Growth, 1988
- High purity GaAs prepared from trimethylgallium and arsineJournal of Crystal Growth, 1981
- The Alkyls of the Third Group Elements. I. Vapor Phase Studies of the Alkyls of Aluminum, Gallium and Indium1Journal of the American Chemical Society, 1941