Ion-induced etching of SiO2: The influence of mixing and lattice damage
- 1 September 1988
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (5) , 2805-2808
- https://doi.org/10.1063/1.341586
Abstract
Modulated‐beam mass spectrometry has been used to investigate the ion‐induced etching of SiO2 in the presence of a flux of XeF2. The types of desorbed etch product are characterized. It is also demonstrated directly that mixing leads to an enhanced etch rate while the presence of lattice damage does not produce spontaneous etching. It is concluded that all available data for the etching of SiO2 with XeF2 is consistent with the original hypothesis of Y. Y. Tu, T. J. Chuang, and H. F. Winters [Phys. Rev. B 2 3, 823 (1981)], that the etching reaction is primarily based on a mechanism involving chemical sputtering.This publication has 19 references indexed in Scilit:
- Reactions of XeF2 with thermally grown SiO2Surface Science, 1988
- Sputtering of chemisorbed nitrogen from single-crystal planes of tungsten and molybdenumPhysical Review B, 1987
- Sputtering of SiO2 in a XeF2 and in a Cl2 atmosphereJournal of Vacuum Science & Technology B, 1986
- Studies on the mechanism of chemical sputtering of silicon by simultaneous exposure to Cl2 and low-energy Ar+ ionsJournal of Vacuum Science & Technology B, 1985
- Surface modification in plasma-assisted etching of siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Sputtering of chlorinated silicon surfaces studied by secondary ion mass spectrometry and ion scattering spectroscopyJournal of Applied Physics, 1985
- Etch products from the reaction on Cl2 with Al(100) and Cu(100) and XeF2 with W(111) and NbJournal of Vacuum Science & Technology B, 1985
- The chemical sputtering of silica by Ar+ ions and XeF2Surface Science, 1984
- Etch products from the reaction of XeF2 with SiO2, Si3N4, SiC, and Si in the presence of ion bombardmentJournal of Vacuum Science & Technology B, 1983
- Chemical sputtering of fluorinated siliconPhysical Review B, 1981