The chemical sputtering of silica by Ar+ ions and XeF2
- 2 June 1984
- journal article
- Published by Elsevier in Surface Science
- Vol. 141 (2-3) , 409-416
- https://doi.org/10.1016/0039-6028(84)90140-7
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Profile control by chemically assisted ion-beam and reactive ion beam etchingApplied Physics Letters, 1983
- A SIMS study of ion-assisted etching mechanisms; adsorbed fluorine on Si removed by ion bombardmentSurface Science, 1982
- Laser-enhanced gas–surface chemistry: Basic processes and applicationsJournal of Vacuum Science and Technology, 1982
- Surface modification by ion chemical and physical erosionSurface Science, 1982
- Investigation of plasma etching mechanisms using beams of reactive gas ionsJournal of Vacuum Science and Technology, 1981
- Ion-enhanced gas-surface chemistry: The influence of the mass of the incident ionSurface Science, 1981
- Chemical sputtering of fluorinated siliconPhysical Review B, 1981
- Ion- and electron-assisted gas-surface chemistry—An important effect in plasma etchingJournal of Applied Physics, 1979
- The etching of silicon with XeF2 vaporApplied Physics Letters, 1979
- A study of the charging and dissociation of SiO2 Surfaces by AESSurface Science, 1977