Photoluminescence microscopy investigation of lattice defects in epitaxial heterostructures
- 2 January 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 126 (2-3) , 205-215
- https://doi.org/10.1016/0022-0248(93)90027-t
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- High-spatial-resolution photoluminescence studies on misfit dislocations in lattice-mismatched III-V heterostructuresSemiconductor Science and Technology, 1992
- Spatial variations of photoluminescence line broadening around oval defects in GaAs/AlGaAs multiple quantum wellsSemiconductor Science and Technology, 1992
- Highly anisotropic electron mobilities of GaAs/In0.2Ga0.8As/Al0.3Ga0.7As inverted high electron mobility transistor structuresApplied Physics Letters, 1991
- Ambient and low temperature photoluminescence topography of GaAs subtrates, epitaxial and implanted layersApplied Surface Science, 1991
- Assessment of Fe-doped semi-insulating InP crystals by scanning photoluminescence measurementsJournal of Applied Physics, 1990
- A spatially resolved spectrally resolved photoluminescence mapping systemJournal of Crystal Growth, 1990
- The identification of dark-line defects in AlGaAs/InGaAs/GaAs heterostructuresJournal of Applied Physics, 1988
- Influence of substrate defects on the structure of epitaxial GaAs grown by MOCVDJournal of Crystal Growth, 1988
- Selective etching and photoetching of GaAs in CrO3-HF aqueous solutions: III. Interpretation of defect-related etch figuresJournal of Crystal Growth, 1986
- Etch Pit Observation of Very Thin {001}-GaAs Layer by Molten KOHJapanese Journal of Applied Physics, 1976