Correlation between Schottky barrier heights on compound semiconductors and metal and semiconductor electronegativities
- 1 September 1981
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (9) , 5702-5704
- https://doi.org/10.1063/1.329508
Abstract
Examination of experimental results reveals a correlation between the free‐surface band‐bending and the value of the metal‐semiconductor barrier extrapolated to zero electronegativity. Further, in materials with relatively high surface‐state densities, the free‐surface Fermi level Esf shows only a small variation for a range of semiconductors. It is proposed that this pinning is associated with the electronegativity of the anion. Formulas are presented for the prediction of barrier heights on a wide range of compound semiconductor alloys.This publication has 10 references indexed in Scilit:
- Rectifying and Ohmic Contacts to GaInAsPJournal of the Electrochemical Society, 1980
- Determination of the valence-band discontinuity of InP1−xGaxP1−zAsz (x∼0.13, z∼0.29) by quantum-well luminescenceApplied Physics Letters, 1979
- New phenomena in Schottky barrier formation on III–V compoundsJournal of Vacuum Science and Technology, 1978
- Relation Between an Atomic Electronegativity Scale and the Work FunctionIBM Journal of Research and Development, 1978
- Schottky-barrier height of Au/p-InGaAsP alloys lattice-matched to InPJournal of Vacuum Science and Technology, 1976
- Schottky barriers on compound semiconductors: The role of the anionJournal of Vacuum Science and Technology, 1976
- Correlation for III-V and II-VI Semiconductors of the Au Schottky Barrier Energy with Anion ElectronegativityPhysical Review Letters, 1976
- Schottky barrier height of n-InxGa1−xAs diodesApplied Physics Letters, 1973
- Electronic properties of clean cleaved {110} GaAs surfacesSurface Science, 1971
- Photoelectric Properties of Cleaved GaAs, GaSb, InAs, and InSb Surfaces; Comparison with Si and GePhysical Review B, 1965