Passive‐Oxidation Kinetics of High‐Purity Silicon Carbide from 800° to 1100°C
- 1 November 1996
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 79 (11) , 2897-2911
- https://doi.org/10.1111/j.1151-2916.1996.tb08724.x
Abstract
No abstract availableKeywords
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