Potential profiling across semiconductor junctions by Auger electron spectroscopy in the scanning electron microscope
- 1 December 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (12) , 5214-5217
- https://doi.org/10.1063/1.321587
Abstract
Auger electron spectroscopy in an ultrahigh‐vacuum scanning electron microscope is shown capable of the direct and quantitative measurement of potential profiles across biased semiconductor junctions. Profiles are obtained with submicron spatial resolution and subvolt potential resolution by measuring shifts of an Auger electron peak across a semiconductor device as a function of surface potential and spatial position. Experimental results on a GaAs p+‐n junction diode for values of reverse bias between 5 and 25 V are in agreement with the potential profiles predicted by the depletion approximation model of a p‐n junction.This publication has 8 references indexed in Scilit:
- Depletion effects in semi−insulating GaAsApplied Physics Letters, 1975
- Voltage contrast linearization with a hemispherical retarding analyserJournal of Physics E: Scientific Instruments, 1974
- Auger electron spectroscopyContemporary Physics, 1973
- Auger Electron Spectroscopy in the Scanning Electron MicroscopeJournal of Testing and Evaluation, 1973
- Auger Electron Spectroscopy in the Scanning Electron Microscope: Auger Electron ImagesApplied Physics Letters, 1971
- AUGER ELECTRON SPECTROSCOPY IN SCANNING ELECTRON MICROSCOPY: POTENTIAL MEASUREMENTSApplied Physics Letters, 1970
- HIGH SENSITIVITY AUGER ELECTRON SPECTROMETERApplied Physics Letters, 1969
- Analysis of Materials by Electron-Excited Auger ElectronsJournal of Applied Physics, 1968