Depletion effects in semi−insulating GaAs

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Abstract
Auger electron spectroscopy in an ultrahigh−vacuum scanning electron microscope is used to determine the potential distribution across p−i−p and n−i−n GaAs structures under dc bias conditions. The two types of specimen structures give rise to very different potential profiles. Depletion regions in the semi−insulating (SI) material at the p−i junctions are identified, an effect that disallows the application of the widely used current injection theory. The depletion effect indicates that the examined SI GaAs material has n−type behavior even though the material is purposely doped with Cr, a known acceptor.