Photovoltaic effects in semi−insulating GaAs
- 1 March 1975
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (3) , 1396-1398
- https://doi.org/10.1063/1.321739
Abstract
Photovoltaic effects at junctions between semi−insulating and low−resistivity GaAs, and at Al Schottky barriers on semi−insulating GaAs are reported. Changes of photovoltage polarity as the photon energy crosses the band−gap energy are interpreted by extension of the behavior of n− and p−type GaAs.This publication has 10 references indexed in Scilit:
- On the influence of donor–acceptor interaction upon recombination and electrical instability in semi-insulating GaAs(Cr)Physica Status Solidi (a), 1973
- Photoconductivity of semi-insulating GaAs (Cr) in high electric fieldPhysica Status Solidi (a), 1971
- On the temperature dependence of mixed conduction in Cr-doped GaAsSolid State Communications, 1970
- Negative Resistance in Chromium-Doped GaAs p-i-n DiodesJournal of Applied Physics, 1969
- The activation energies of chromium, iron and nickel in gallium arsenideJournal of Physics D: Applied Physics, 1968
- Photoconductivity and infra-red quenching in chromium-doped semi-insulating gallium arsenideJournal of Physics D: Applied Physics, 1968
- Optical Absorption in Chromium Doped, High Resistivity GaAs in the 0.6 to 1.5 ev RangeJournal of the Electrochemical Society, 1966
- Fermi Level Position at Metal-Semiconductor InterfacesPhysical Review B, 1964
- The Preparation of Semi-Insulating Gallium Arsenide by Chromium DopingJournal of the Electrochemical Society, 1964
- Properties of High-Resistivity Gallium Arsenide Compensated with Diffused CopperJournal of Applied Physics, 1961