Modulated‐impurity‐concentration transferred‐electron devices exhibiting large harmonic frequency content

1 July 1992

journal article
research article
Published by Wiley in Microwave and Optical Technology Letters

Vol. 5 (8) , 354-359
https://doi.org/10.1002/mop.4650050804

Abstract

We report large increases in the harmonic components of the oscillation current waveforms for InP and GaAs TEDs by appropriate modulation of the device doping profile. The results are based on accurate drift‐diffusion simulations of Gunn‐diode structures. An unoptimized InP modulated‐impurity‐concentration transferred‐electron device demonstrated a 100% increase in second‐harmonic power generation as compared with its companion TED. © 1992 John Wiley & Sons, Inc.

Keywords

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