The design and performance of near micron SOS MOSFETs
- 1 November 1983
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 14 (6) , 33-44
- https://doi.org/10.1016/s0026-2692(83)80082-2
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A mobility model for carriers in the MOS inversion layerIEEE Transactions on Electron Devices, 1983
- Reduction in crystallographic surface defects and strain in 0.2-μm-thick silicon-on-sapphire films by repetitive implantation and solid-phase epitaxyApplied Physics Letters, 1982
- Improvement of SOS Device Performance by Solid-Phase EpitaxyJapanese Journal of Applied Physics, 1982
- An analytical expression for the threshold voltage of a small geometry MOSFETSolid-State Electronics, 1981
- A comparison of simple and numerical two-dimensional models for the threshold voltage of short channel MOSTsSolid-State Electronics, 1977