Single Event Upset Dependence on Temperature or an NMOS/Resistive-Load Static RAM
- 1 January 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 33 (6) , 1610-1615
- https://doi.org/10.1109/TNS.1986.4334650
Abstract
Measurements of temperature effects on SEU rates have been made on NMOS/resistive-load static RAMs using energetic protons and alphas. Results have indicated that SEU cross sections increase with increasing temperature for these parts. Proton and alpha induced nuclear reactions allow upsets to occur below measured LET thresholds.Keywords
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