Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency
- 18 December 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (25)
- https://doi.org/10.1063/1.2403907
Abstract
We investigate the operation of a quantum dot, optically gated, field-effect transistor as a photon detector. The detector exhibits time-gated, single-shot, single-photon sensitivity, a linear response, and an internal quantum efficiency of up to (68±18)% at 4K. Given the noise of the detector system, they find that a particular discriminator level can be chosen so the device operates with an internal quantum efficiency of (53±11)% and dark counts of 0.003 counts per shot.Keywords
This publication has 8 references indexed in Scilit:
- Single photoelectron trapping, storage, and detection in a one-electron quantum dotJournal of Applied Physics, 2005
- Low-noise photon counting with a radio-frequency quantum-dot field-effect transistorApplied Physics Letters, 2004
- Single photoelectron trapping, storage, and detection in a field effect transistorPhysical Review B, 2003
- Photoconductance quantization in a single-photon detectorPhysical Review B, 2002
- Detection of single photons using a field-effect transistor gated by a layer of quantum dotsApplied Physics Letters, 2000
- Electron and hole storage in self-assembled InAs quantum dotsPhysica E: Low-dimensional Systems and Nanostructures, 2000
- Optically induced bistability in the mobility of a two-dimensional electron gas coupled to a layer of quantum dotsApplied Physics Letters, 1999
- GaAs/ n -AlGaAs field-effect transistor withembedded InAs quantum traps and its programmable threshold characteristicsElectronics Letters, 1996