Detailed study of scanning capacitance microscopy on cross-sectional and beveled junctions
- 1 March 2002
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 20 (2) , 741-746
- https://doi.org/10.1116/1.1464834
Abstract
In this work we have done a systematic study with scanning capacitance microscopy (SCM) on cross-sectional and beveled structures. A study was made on the practical problem of contrast reversal as well as on the effect of carrier spilling related to bevel angle, steepness and substrate concentration of the doping profile. A comparison has been made with the results achieved with spreading resistance profiling and also with theoretical predictions. Finally, the junction displacement for cross-sectional and beveled junctions is studied as a function of the applied bias. It is shown that the junction displacement is much smaller on the beveled surface after demagnification. Furthermore, the large extension of the profile along the beveled surface allows us to study the bias induced variation of the SCM signal within the depletion layer in great detail.Keywords
This publication has 20 references indexed in Scilit:
- High-resolution scanning capacitance microscopy of silicon devices by surface bevelingApplied Physics Letters, 2000
- Another dimension in device characterizationIEEE Circuits and Devices Magazine, 2000
- Practicalities and limitations of scanning capacitance microscopy for routine integrated circuit characterizationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000
- Nonmonotonic behavior of the scanning capacitance microscope for large dynamic range samplesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000
- Progress toward a 30 nm silicon metal–oxide–semiconductor gate technologyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999
- Observation of metal–oxide–semiconductor transistor operation using scanning capacitance microscopyApplied Physics Letters, 1999
- Qualification of spreading resistance probe operationsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Two-dimensional spreading resistance profiling: Recent understandings and applicationsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Quantitative analysis of on bevel electrical junction shifts due to carrier spilling effectsApplied Physics Letters, 1990
- Scanning capacitance microscopyJournal of Applied Physics, 1985