Threshold switching as a generation-recombination induced non-equilibrium phase transition (II)
- 16 May 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 65 (1) , 353-364
- https://doi.org/10.1002/pssa.2210650141
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Stability and dissipation: non-equilibrium phase transition in semiconductorsEuropean Journal of Physics, 1980
- Formal conditions for non-equilibrium phase transitions in semiconductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1979
- Semiconductor models for first and second order non-equilibrium phase transitionsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1979
- Threshold switching as a generation-recombination induced non-equilibrium phase transitionPhysica Status Solidi (a), 1978
- The mechanism of threshold switching in amorphous alloysReviews of Modern Physics, 1978
- Recombination-induced non-equilibrium phase transitions in semiconductorsJournal of Physics C: Solid State Physics, 1976
- Switching times in amorphous boron, boron plus carbon, and silicon thin filmsJournal of Applied Physics, 1975