Electroreflectance investigation of (Ga1−xAlx)0.47In0.53As lattice matched to InP
- 1 July 1983
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (1) , 109-111
- https://doi.org/10.1063/1.94146
Abstract
We present the first electroreflectance study of (Ga1−xAlx)0.47In0.53As lattice matched to InP (0≤x≤1) in the energy range 0.7–5.5 eV. The composition dependence of the E0 (fundamental band gap), E0+Δ0 (spin‐orbit component), E1, E1+Δ1, E′0 , and E0+Δ′0 optical features, as well as the spin‐orbit splitting parameters Δ0 and Δ1, have been determined. The variation of E0 with composition is in good agreement with recent photoluminescence measurements as well as with a band structure calculation. The bowing parameters of Δ0 and Δ1 will be discussed in terms of a generalized Van Vechten–Berolo–Woolley model.Keywords
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