Electrical and optical studies of dislocation filtering in InGaAs/GaAs strained-layer superlattices
- 19 September 1988
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (12) , 1098-1100
- https://doi.org/10.1063/1.100032
Abstract
We report electrical transport and optical studies of the efficiency with which an In0.2Ga0.8As/GaAs strained‐layer superlattice (SLS) can filter threading dislocations generated in a thick In0.1 Ga0.9 As layer grown on GaAs. The electrical studies, the first of their kind, rely on a novel test structure which allows electrical characterization of just the top portion of the SLS, with the bottom portion acting as the dislocation filter. For optical characterization we detect dislocations directly by photoluminescence microscopy. The electrical results show that ∼3–6 periods of filtering are needed to attain high mobilities. The photoluminescence microimages show a small density of dislocations near the top of an eight‐period SLS but no dislocations for 11 or more periods. Filtering with In0.2Ga0.8As/GaAs SLS’s is more effective than with GaAs0.8P0.2/GaAs SLS’s, possibly because of larger interlayer differences in strain and elastic constants for the former.Keywords
This publication has 14 references indexed in Scilit:
- Effectiveness of strained-layer superlattices in reducing defects in GaAs epilayers grown on silicon substratesApplied Physics Letters, 1987
- Dislocation filtering in semiconductor superlattices with lattice-matched and lattice-mismatched layer materialsApplied Physics Letters, 1986
- The preparation of InAs1−xSbx alloys and strained-layer superlattices by MOCVDJournal of Crystal Growth, 1986
- Strained-layer superlattices: A brief reviewIEEE Journal of Quantum Electronics, 1986
- Elimination of dark line defects in lattice-mismatched epilayers through use of strained-layer superlatticesApplied Physics Letters, 1985
- Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained-layer superlatticesApplied Physics Letters, 1985
- OPTICAL IMAGING OF DISLOCATIONS IN STRAINED—LAYER SUPERLATTICES AND LATTICE—MISMATCHED EPILAYERSMRS Proceedings, 1985
- Electron mobilities in In0.2Ga0.8As/GaAs strained-layer superlatticesApplied Physics Letters, 1983
- Use of misfit strain to remove dislocations from epitaxial thin filmsThin Solid Films, 1976
- Defects in epitaxial multilayersJournal of Crystal Growth, 1976