Electron mobilities in In0.2Ga0.8As/GaAs strained-layer superlattices
- 1 November 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (9) , 846-848
- https://doi.org/10.1063/1.94523
Abstract
We report the first Hall effect and resistivity measurements on strained‐layer superlattices (SLS’s) in the (In,Ga)As system. The samples, grown by molecular beam epitaxy, had 60 periods of alternating, 120‐Å‐thick In0.2Ga0.8 As and GaAs layers. Both uniform‐doped and modulation‐doped structures (with Si donors) were studied. Low‐temperature mobilities of over 3×104 cm2/Vs were obtained for structures with doping in only the central 30‐Å region of each GaAs layer. Our results are comparable to reported results on similar (Al,Ga)As superlattices, confirming that high crystalline quality can be obtained in SLS’s with significant mismatch (∼1.4%) and many interfaces (>100).Keywords
This publication has 17 references indexed in Scilit:
- strained-layer superlattices: A proposal for useful, new electronic materialsPhysical Review B, 1983
- Electronic properties of strained-layer superlatticesJournal of Vacuum Science & Technology B, 1983
- Photocurrent spectroscopy of a strained-layer superlatticeSolid State Communications, 1983
- Electronic structure of GaAsxP1−x/GaP strained-layer superlattices with x<0.5Journal of Vacuum Science and Technology, 1982
- Growth and photoluminescence characterization of a GaAsxP1−x/GaP strained-layer superlatticeJournal of Vacuum Science and Technology, 1982
- Liquid phase epitaxial growth and characterization of high purity lattice matched GaxIn1-xAs ON B InPJournal of Electronic Materials, 1980
- Defects in epitaxial multilayersJournal of Crystal Growth, 1976
- Defects in epitaxial multilayersJournal of Crystal Growth, 1975
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974
- Simple empirical relationship between mobility and carrier concentrationElectronics Letters, 1974