Electrical measurements on n+-GaAs-undoped Ga0.6Al0.4 As-n-GaAs capacitors

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Abstract
Current versus voltage (I‐V) and capacitance versus voltage (C‐V) characteristics have been measured for n+‐GaAs‐undoped Ga0.6Al0.4 As‐GaAs capacitors over a temperature range of 80–350 K. At low temperatures the structure behaves like a semiconductor‐insulator‐semiconductor diode with interface barrier heights of 0.38 and 0.40 eV for the bottom and top interfaces, respectively. The I‐V curves exhibit a rectifying behavior due to the formation of a substrate depletion layer, and the C‐V curves show the formation of the depletion layer under reverse bias as well as an accumulation layer containing >1012 electrons/cm2, in forward bias. The C‐V curves agree closely with standard theory for SIS structures assuming Fermi–Dirac statistics for electrons in the accumulation layer, within an unaccounted‐for voltage shift of 0.16 V.