Discrete random dopant distribution effects in nanometer-scale MOSFETs
- 1 September 1998
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 38 (9) , 1447-1456
- https://doi.org/10.1016/s0026-2714(98)00053-5
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Three-dimensional "atomistic" simulation of discrete random dopant distribution effects in sub-0.1 μm MOSFET'sPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Random MOSFET parameter fluctuation limits to gigascale integration (GSI)Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Supply and threshold voltage optimization for low power designPublished by Association for Computing Machinery (ACM) ,1997
- Technology leverage for ultra-low power information systemsProceedings of the IEEE, 1995
- Experimental Study Of Threshold Voltage Fluctuations Using An 8k MOSFET's ArrayPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- Effects of microscopic fluctuations in dopant distributions on MOSFET threshold voltageIEEE Transactions on Electron Devices, 1992
- Technology challenges for ultrasmall silicon MOSFET’sJournal of Vacuum Science and Technology, 1981
- The effect of randomness in the distribution of impurity atoms on FET thresholdsApplied Physics A, 1975
- Effect of randomness in the distribution of impurity ions on FET thresholds in integrated electronicsIEEE Journal of Solid-State Circuits, 1975
- Fundamental limitations in microelectronics—I. MOS technologySolid-State Electronics, 1972