Effect of disorder on structures due to interband transitions in silicon
- 1 May 1986
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 58 (7) , 483-484
- https://doi.org/10.1016/0038-1098(86)90038-4
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Optical study of self-annealing in high-current arsenic-implanted siliconJournal of Applied Physics, 1985
- Direct Determination of Sizes of Excitations from Optical Measurements on Ion-Implanted GaAsPhysical Review Letters, 1982
- Optical spectra of glow-discharge-deposited siliconPhilosophical Magazine Part B, 1979
- Optical reflectivity of ion-implanted amorphous GaAsApplied Physics Letters, 1978