Shift of the DX level in narrow Si delta-doped GaAs
- 1 October 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (10B) , B143-B145
- https://doi.org/10.1088/0268-1242/6/10b/027
Abstract
The authors present measurements under hydrostatic pressure on Si delta-doped GaAs. From the measurements they conclude that the energy position of the DX level is shifted away from the Gamma conduction band minimum at high doping concentrations. This shift is consistent with measurements carried out on bulk GaAs heavily doped with silicon.Keywords
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