Post-growth diffusion of Si in delta -doped GaAs grown by MBE

Publisher Website
Google Scholar
Abstract
A GaAs layer grown by MBE at a substrate temperature of 520 degrees C and containing three delta -doped planes with Si concentrations of 0.4, 1 and 4*1013 atoms/cm2 has been post-growth annealed in a furnace, up to temperatures of 648 degrees C. Secondary ion mass spectroscopy (SIMS) and capacitance voltage (cv) measurements have been carried out to measure profile-broadening. The most lightly doped plane gave a near-Gaussian diffusion profile with a diffusion coefficient comparable with literature values for simple diffusion of isolated SiGa atoms. The more heavily doped planes exhibit a complex profile shape with two components, a proportion of the atoms being confined to the original plane, together with an almost square-shaped profile of fast-diffusing atoms. Comparison of the CV and SIMS data suggests that formation of Si islands is taking place during deposition of the delta -doped plane, giving electrically inactive atoms which can subsequently diffuse into the surrounding GaAs during heat-treatment. This model is supported by preliminary local vibrational mode measurements which have been made on a set of multiplane samples.