Desorption of Ga and As Atoms from GaAs Surface Induced by Slow Multiply Charged Ar Ions
- 1 December 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (12S) , 6861-6865
- https://doi.org/10.1143/jjap.34.6861
Abstract
A reaction on a semiconductor surface induced by the potential energy of slow multiply charged ions (MCIs) has been investigated. By using an Einzel-type ion decelerator, beams of slow MCIs ( Ar q +; q≤10) with an ion current of several tens of nanoamperes and with the kinetic energy (E k) of 30×q eV were produced. Irradiating a GaAs surface with the slow Ar q + induced the desorption of Ga and As atoms, and this desorption was almost independent of the E k but strongly dependent on the q; that is, on the potential energy (E p) of the Ar q +. The effect of E p on atom desorption was analyzed quantitatively in terms of a model based on the Coulomb repulsion between holes generated on the surface through neutralization of the MCIs.Keywords
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