Relaxation time broadening on emission spectrum of a Zn-doped p-type GaAs injection laser
- 1 November 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (9) , 818-820
- https://doi.org/10.1063/1.94520
Abstract
Spontaneous emission and lasing gain profiles of semiconductor injection lasers which have Zn-doped GaAs active regions were experimentally determined, and the tailing phenomenon into the band gap of these profiles was theoretically explained as a result of relaxation time broadening due to scattering of electrons and holes. Especially, the tail of the gain profile was found to show a concave shape, which was better explained by the relaxation time broadening model than by the band tail state model.Keywords
This publication has 13 references indexed in Scilit:
- Analysis of gain suppression in undoped injection lasersJournal of Applied Physics, 1981
- Estimation of the Intra-Band Relaxation Time in Undoped AlGaAs Injection LaserJapanese Journal of Applied Physics, 1980
- Calculated spectral dependence of gain in excited GaAsJournal of Applied Physics, 1976
- Concentration-dependent absorption and spontaneous emission of heavily doped GaAsJournal of Applied Physics, 1976
- Exciton effects on luminescence of undoped active layers in GaAs-Ga1−xAlxAs double-heterostructure crystals at temperatures between 77 and 300 KJournal of Applied Physics, 1975
- Transverse-junction-stripe-geometry double-heterostructure lasers with very low threshold currentJournal of Applied Physics, 1974
- Impurity-Band Tails in the High-Density Limit. I. Minimum Counting MethodsPhysical Review B, 1966
- Electron Interaction Effects on Recombination SpectraPhysica Status Solidi (b), 1966
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964
- Thomas-Fermi Approach to Impure Semiconductor Band StructurePhysical Review B, 1963