Experiments and computer simulations of iron profiles in p/p+ silicon: segregation and the position of the iron donor level

This publication has 10 references indexed in Scilit:

• Iron and its complexes in silicon
  Applied Physics A, 1999
• Iron solubility in highly boron-doped silicon
  Applied Physics Letters, 1998
• Iron and Nickel Solubilities in Heavily Doped Silicon and their Energy Levels in the Silicon Band Gap at Elevated Temperatures
  MRS Proceedings, 1998
• Iron gettering mechanisms in silicon
  Journal of Applied Physics, 1996
• The mechanism of iron gettering in boron-doped silicon
  Applied Physics Letters, 1996
• Impact of the electronic structure on the solubility and diffusion of 3dtransition elements in silicon
  Physical Review B, 1990
• Epitaxial layer enhancement of n-well guard rings for CMOS circuits
  IEEE Electron Device Letters, 1983
• Energieniveaus und Bindungsenergien von Ionenpaaren in Silizium
  Physica Status Solidi (a), 1983
• The Standard Thermodynamic Functions for the Formation of Electrons and Holes in Ge, Si, GaAs , and GaP
  Journal of the Electrochemical Society, 1975
• Chemical Interactions Among Defects in Germanium and Silicon
  Bell System Technical Journal, 1956