The use of chloride based precursors in metalorganic vapor phase epitaxy
- 1 December 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 115 (1-4) , 52-60
- https://doi.org/10.1016/0022-0248(91)90711-d
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Selective area MOVPE of GaInAs/InP heterostructures on masked and nonplanar (100) and {111} substratesJournal of Crystal Growth, 1991
- Selective epitaxy of GaAs, AlxGa1−xAs, and InxGa1−xAsJournal of Crystal Growth, 1991
- Quantum wire lasers by OMCVD growth on nonplanar substratesJournal of Crystal Growth, 1991
- Selective Epitaxy of Compound Semiconductors in Movpe Growth: Growth, Modelling, and ApplicationsMRS Proceedings, 1990
- Selective Epitaxy of AlxGa1−x as and AlxGal−x as Based StructuresMRS Proceedings, 1989
- Planar selective growth of InP by MOVPEJournal of Crystal Growth, 1988
- Selective Area Growth of High Quality GaAs by OMCVD Using Native Oxide MasksJournal of the Electrochemical Society, 1987
- Low-Temperature Photoluminescence of Mocvd GaAs Grown Directly on SiMRS Proceedings, 1987
- Chemical Etching of InGaAsP / InP DH WaferJournal of the Electrochemical Society, 1982
- The Growth and Etching of Si through Windows in SiO[sub 2]Journal of the Electrochemical Society, 1967