The spectral response and efficiency of heavily doped emitters in silicon photovoltaic devices
- 30 September 1987
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 30 (9) , 927-937
- https://doi.org/10.1016/0038-1101(87)90129-8
Abstract
No abstract availableKeywords
This publication has 33 references indexed in Scilit:
- Influence of the dopant density profile on minority-carrier current in shallow, heavily doped emitters of silicon bipolar devicesSolid-State Electronics, 1985
- Measuring and modeling minority carrier transport in heavily doped siliconSolid-State Electronics, 1985
- Simple general analytical solution to the minority carrier transport in heavily doped semiconductorsJournal of Applied Physics, 1984
- The physics and modeling of heavily doped emittersIEEE Transactions on Electron Devices, 1984
- Comments on "A method for determining energy gap narrowing in highly doped semiconductors"IEEE Transactions on Electron Devices, 1984
- Carrier recombination and lifetime in highly doped siliconSolid-State Electronics, 1983
- An analytic model for minority-carrier transport in heavily doped regions of silicon devicesIEEE Transactions on Electron Devices, 1981
- Pictorial derivation of the influence of degeneracy and disorder on nondegenerate minority-carrier concentration and recombination current in heavily doped siliconIEEE Electron Device Letters, 1981
- The importance of surface recombination and energy-bandgap arrowing in p-n-junction silicon solar cellsIEEE Transactions on Electron Devices, 1979
- Heavily doped transparent-emitter regions in junction solar cells, diodes, and transistorsIEEE Transactions on Electron Devices, 1979