Room-temperature annealing of Si implantation damage in InP
- 11 November 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (20) , 2570-2572
- https://doi.org/10.1063/1.105957
Abstract
Spontaneous recovery at 295 K of Si implant damage in InP is reported. InP(Zn) and InP(S) wafers of (100) orientation have been implanted at room temperature with 600 keV Si+ ions to doses ranging from 3.6×1011 to 2×1014 cm−2. Room-temperature annealing of the resultant damage has been monitored by the Rutherford backscattering/channeling technique. For Si doses ≤4×1013 cm−2, up to 70% of the initial damage (displaced atoms) annealed out over a period of ≊85 days. The degree of recovery was found to depend on the initial level of damage. Recovery is characterized by at least two time constants t1<5 days and a longer t2≊100 days. Anneal rates observed between 295 and 375 K are consistent with an activation energy of 1.2 eV, suggesting that the migration of implant-induced vacancies is associated with the reordering of the InP lattice.Keywords
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