Rapid thermal annealing of Ge-implanted InP
- 8 October 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (15) , 1514-1516
- https://doi.org/10.1063/1.103380
Abstract
Results from n-type doping by Ge implantation at 200 keV into 〈100〉 p-type InP are reported. The degree of recrystallization and electrical activity after capless annealing by rapid thermal annealing was investigated as a function of dose, implantation, and annealing temperature by a combination of Rutherford backscattering spectrometry/channeling, differential Hall/resistivity, and secondary-ion mass spectrometry measurements. Room-temperature implantations resulted in continuous amorphous layers even at a dose of 2×1013cm−2 in contrast to hot implantations at 200 °C where no amorphous layers were created even for a dose as high as 5×1014 cm−2. For the latter dose an activation percentage of 37 and a maximum carrier concentration of 1×1019 cm−3 were achieved after rapid thermal annealing at 830 °C for 1 s.Keywords
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