Determination of minority carrier lifetime using MIS tunnel diodes
- 15 November 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (10) , 587-589
- https://doi.org/10.1063/1.1655322
Abstract
A new and simple method that employs MIS tunnel diodes is described here for the determination of minority carrier lifetime in semiconductors. For large reverse bias, a direct current was measured across Si–SiO2‐metal devices with oxide thickness between 40 and 60 Å. This current is the generation current in the semiconductor space‐charge layer, and the lifetime is easily obtained from it.Keywords
This publication has 5 references indexed in Scilit:
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