1.3 μm continuous-wave GaInNAs/GaAs distributed feedback laser diodes

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Abstract
GaInNAs/GaAs single-quantum-well lasers were grown by solid-source molecular-beam epitaxy using a radio-frequency source for nitrogen activation. Distributed feedback has been realized by a metal grating arranged laterally to the laser ridge. Single-mode emission between 1271 and 1304 nm could be demonstrated. Room-temperature continuous-wave operation has been obtained with a threshold current of 28 mA, an external efficiency of 0.16 W/A per facet, and a side-mode suppression ratio of 44 dB at 90 mA drive current.