On the ion implantation of the group VI impurities into GaAs
- 1 May 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (5) , 705-710
- https://doi.org/10.1016/0038-1101(78)90001-1
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Low-dose n-type ion implantation into Cr-doped GaAs substratesSolid-State Electronics, 1977
- Annealing of Ion‐Implanted GaAs in a Controlled AtmosphereJournal of the Electrochemical Society, 1976
- High-efficiency ion-implanted lo-hi-lo GaAs IMPATT diodesApplied Physics Letters, 1976
- Tellurium-implanted N+ layers in GaAsSolid-State Electronics, 1975
- Fast and nondestructive method of C ( V ) profiling of thin semiconductor layers on an insulating substrateElectronics Letters, 1975
- Silicon- and selenium-ion-implanted GaAs reproducibly annealed at temperatures up to 950 °CApplied Physics Letters, 1975
- Ion implantation in compound semiconductors–an approach based on solid state theoryRadiation Effects, 1973
- Properties of ion implanted silicon, sulfur, and carbon in gallium arsenideRadiation Effects, 1970