Local disorder effects on the pressure dependence of the metal–insulator transition in manganese perovskites
- 18 May 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (20) , 2607-2609
- https://doi.org/10.1063/1.121432
Abstract
We address the role of the local disorder created by substitutional ions in L2/3A1/3MnO3 oxides, on the pressure dependence of the Curie temperature dln TC/dP. A number of manganites having distinct averaged lanthanide R0 radii and size variance σ2 have been prepared and their resistivity measured up to 11 kbar. It is found that the measured dln TC/dP is mainly determined by R0. However, materials having larger local disorder display larger pressure sensitivity. It is proposed that this results from partial suppression of the local disorder under pressure, and a model is developed to account for the experimental data.Keywords
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