Hydrogen Passivation and Ozone Oxidation of Silicon Surface
- 1 January 1998
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
The oxidation of H/Si(100) and H/Si(111) with high concentration ozone gas was investigated with X-ray photoelectron spectroscopy(XPS). The ozone oxidation of partially hydride-covered surface was observed. The hydrogen termination reduced the rate of oxygen insertion into silicon backbond. The reduction of oxygen insertion rate by the H-termination for H/Si(100) was larger than that for HSi(111). The dissociation rate of ozone molecule on H/Si was estimated to be ≃0.2 with a directional mass analyzer.Keywords
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