Preferential photoelectrochemical etching in n-InP
- 31 March 1988
- journal article
- Published by Elsevier in Materials Letters
- Vol. 6 (5) , 183-185
- https://doi.org/10.1016/0167-577x(88)90098-5
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Chemical Etching Characteristics of InGaAs / InP and InAlAs / InP HeterostructuresJournal of the Electrochemical Society, 1987
- Orientational Dependence of Photoelectrochemical Etching in n ‐ GaAsJournal of the Electrochemical Society, 1987
- Preferential Etching of InP for Submicron Fabrication with HCl / H 3 PO 4 SolutionJournal of the Electrochemical Society, 1985
- Photochemical microetching of GaAsElectronics Letters, 1983
- Chemical Etching Characteristics of ( 001 ) InPJournal of the Electrochemical Society, 1981