Coupled Walls in Multilayer Films
- 1 February 1968
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 39 (2) , 1181-1190
- https://doi.org/10.1063/1.1656218
Abstract
If the thickness of an intermediate nonmagnetic layer separating two ferromagnetic layers is larger than the ferromagnetic wall thickness (order of 1 μ), only a magnetostatic interaction at the film edges exists. If the intermediate-film thickness is smaller than the wall thickness, the magnetostatic interaction of the domain walls is essential, yielding special multilayer wall configurations. If the intermediate film is thinner than that necessary for a complete exchange isolation (order of 10 nm), the wall configurations are modified by an exchange coupling between the local magnetizations of the layers. The wall configurations and their influence on the wall motion and switching behavior are reviewed in this paper.This publication has 29 references indexed in Scilit:
- Minimum-Energy Trajectory Method for Constructing Hysteresis Loops for N Coupled FilmsJournal of Applied Physics, 1966
- Nondestructive-Readout Coupled Film Memory DeviceJournal of Applied Physics, 1966
- Coupled Biaxial FilmsJournal of Applied Physics, 1964
- Internal Field, Dispersion, Creeping, and Switching Speed of Coupled FilmsJournal of Applied Physics, 1963
- Wall-Wall Interaction between Thin Magnetic FilmsJournal of Applied Physics, 1963
- Analysis of Static and Quasidynamic Behavior of Magnetostatically Coupled Thin Magnetic FilmsIBM Journal of Research and Development, 1962
- Very Low Coercive Force in Nickel–iron FilmsNature, 1962
- Magnetostatic Interactions between Thin Magnetic FilmsJournal of Applied Physics, 1962
- Magneto-Optically Measured High-Speed Switching of Sandwich Thin Film ElementsJournal of Applied Physics, 1962
- A Vacum Evaporated Random Access MemoryProceedings of the IRE, 1960