Ellipsometric investigation of optical constant and band gap of Ga1−xInxN/GaN (x≤0.12) heterostructures
- 1 April 2000
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 114 (6) , 325-328
- https://doi.org/10.1016/s0038-1098(00)00051-x
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Refractive index of InGaN/GaN quantum wellJournal of Applied Physics, 1998
- Optical properties of InxGa1−xN alloys grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1998
- Optical band gap in Ga1−xInxN (0<x<0.2) on GaN by photoreflection spectroscopyApplied Physics Letters, 1998
- Large band gap bowing of InxGa1−xN alloysApplied Physics Letters, 1998
- Band-gap separation in InGaN epilayers grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1998
- Photoluminescence measurement of InGaN and GaN grown by a gas-source molecular-beam epitaxy methodJournal of Applied Physics, 1997
- Luminescences from localized states in InGaN epilayersApplied Physics Letters, 1997
- Optical transitions in InxGa1−xN alloys grown by metalorganic chemical vapor depositionApplied Physics Letters, 1996
- InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity FacetsJapanese Journal of Applied Physics, 1996
- Si- and Ge-Doped GaN Films Grown with GaN Buffer LayersJapanese Journal of Applied Physics, 1992