Non-uniform triggering of gg-nMOSt investigated by combined emission microscopy and transmission line pulsing
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- The impact of technology scaling on ESD robustness and protection circuit designIEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A, 1995
- Fundamentals of light emission from silicon devicesSemiconductor Science and Technology, 1994
- Photon emission study of ESD protection devices under second breakdown conditionsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1994
- Beyond MIL HBM testing: how to evaluate the real capability of protection structuresJournal of Electrostatics, 1992
- Quantitative emission microscopyJournal of Applied Physics, 1992
- Hot-carrier luminescence in SiPhysical Review B, 1992
- Achieving uniform nMOS device power distribution for sub-micron ESD reliabilityPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1992
- Photon emission as a tool for esd failure localization and as a technique for studying ESD phenomenaQuality and Reliability Engineering International, 1991
- High-current snapback characteristics of MOSFETsIEEE Transactions on Electron Devices, 1990
- ESD on CHMOS Devices - Equivalent Circuits, Physical Models and Failure Mechanisms8th Reliability Physics Symposium, 1985