Carrier Dynamics in InGaAs/GaAs Quantum Dots
- 1 November 1997
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 204 (1) , 290-292
- https://doi.org/10.1002/1521-3951(199711)204:1<290::aid-pssb290>3.0.co;2-z
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Time resolved study of self-assembled InAs quantum dotsApplied Physics Letters, 1996
- Rapid carrier relaxation in self-assembledAs/GaAs quantum dotsPhysical Review B, 1996
- Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dotsApplied Physics Letters, 1996
- InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structurePhysical Review B, 1995
- Multiphonon-assisted tunneling through deep levels: A rapid energy-relaxation mechanism in nonideal quantum-dot heterostructuresPhysical Review B, 1995
- Radiative lifetimes of excitons in semiconductor quantum dotsSuperlattices and Microstructures, 1993
- Electron relaxation in quantum dots by means of Auger processesPhysical Review B, 1992
- Linewidth dependence of radiative exciton lifetimes in quantum wellsPhysical Review Letters, 1987