Surface processes in ion-induced etching
- 1 January 1986
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 18 (1-6) , 625-628
- https://doi.org/10.1016/s0168-583x(86)80100-8
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Etching of silicon by SF6 induced by ion bombardmentNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Studies on the mechanism of chemical sputtering of silicon by simultaneous exposure to Cl2 and low-energy Ar+ ionsJournal of Vacuum Science & Technology B, 1985
- Surface modification in plasma-assisted etching of siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Low power ion-beam-assisted etching of indium phosphideNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Argon-ion assisted etching of silicon by molecular chlorineJournal of Applied Physics, 1984
- Ion-assisted etching of silicon by molecular chlorineJournal of Vacuum Science & Technology A, 1984
- Surface studies of and a mass balance model for Ar+ ion-assisted Cl2 etching of SiJournal of Vacuum Science & Technology B, 1983
- Ion-enhanced gas-surface chemistry: The influence of the mass of the incident ionSurface Science, 1981
- Chemical sputtering of fluorinated siliconPhysical Review B, 1981
- Ion- and electron-assisted gas-surface chemistry—An important effect in plasma etchingJournal of Applied Physics, 1979