Nitrogen related defect centers in zinc selenide

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Abstract
Acceptor levels associated with nitrogen in vapor-grown zinc selenide have been observed with optically excited transient capacitance spectroscopy. Three hole traps with energy levels of Ev +0.085, Ev +0.10, and Ev +0.16 eV, respectively, were detected in the deliberately nitrogen doped material. An electron trap at Ec −0.35 eV whose concentration increased upon nitrogen doping was also detected. Total concentrations of the shallow hole levels were as high as 1×1016 cm−3 indicating the potential of nitrogen as a p-type dopant for zinc selenide p-n junction fabrication.