Photoemission Extended Fine Structure Study of the Si/Si(111) Interface
- 23 September 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 77 (13) , 2758-2761
- https://doi.org/10.1103/physrevlett.77.2758
Abstract
High-resolution Si 2p core level photoemission spectra of the Si/Si(111) system show chemically shifted components derived from individual oxidation states, which exhibit strong intensity modulations as a function of photon energy due to final-state diffraction. Analysis of these photoemission intensity modulations gives bond-length information specific to the individual suboxide. The results indicate that the interface is atomically abrupt.
Keywords
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