On the Role of the Back Contact in DLTS Experiments with Schottky Diodes
- 16 June 1985
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 89 (2) , 693-698
- https://doi.org/10.1002/pssa.2210890233
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Transient capacitance measurements on resistive samplesJournal of Applied Physics, 1983
- Contact resistance: Al and Al–Si to diffused N+ and P+ siliconJournal of Vacuum Science & Technology A, 1983
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974