A high-resolution study of two-dimensional oxidation-enhanced diffusion in silicon
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 299-302
- https://doi.org/10.1109/iedm.1993.347348
Abstract
A new method for the determination of two-dimensional oxidation-enhanced diffusion (OED) is presented. The resolution of the technique in the lateral direction is /spl sim/10 nm. The technique is used to study the influence of the gate reoxidation step on the channel profile of MOSFET's. For boron, it is shown that the lateral extent of OED depends on the depth. The same technique is used to study segregation of boron during the lateral oxidation of the polysilicon gate.Keywords
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