Ka-band ultra low noise MMIC amplifier using pseudomorphic HEMTs
- 22 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1 (0149645X) , 17-20
- https://doi.org/10.1109/mwsym.1997.604417
Abstract
A Ka-band monolithic low noise two stage amplifier has been developed using an AlGaAs-InGaAs-GaAs pseudomorphic HEMTs with a gate length of 0.15 /spl mu/m. For a superior noise figure, the MMIC was optimized by inserting a low loss resonator type stabilizing circuit without sacrificing the gain performance. The amplifier has achieved a 1.0 dB noise figure with an associated gain of 18.0 dB at 32 GHz. These results are the best of AlGaAs-InGaAs-GaAs P-HEMT MMICs ever reported to date.Keywords
This publication has 3 references indexed in Scilit:
- High performance Q-band 0.15 mu m InGaAs HEMT MMIC LNAPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A super low noise V-band AlInAs/InGaAs HEMT processed by selective wet gate recess etchingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-performance Ka-band monolithic low-noise amplifiers using 0.2-μm dry-recessed GaAs PHEMTsIEEE Microwave and Guided Wave Letters, 1996