Electron-beam-induced current and TEM studies of stacking faults formed by the oxidation of boron-implanted silicon
- 1 December 1977
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (12) , 5038-5042
- https://doi.org/10.1063/1.323630
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Transistors with boron bases predeposited by ion implantation and annealed in various oxygen ambientsIEEE Transactions on Electron Devices, 1977
- Reduced gain of ion−implanted transistorsApplied Physics Letters, 1975
- Role of sequential annealing, oxidation, and diffusion upon defect generation in ion-implanted silicon surfacesJournal of Applied Physics, 1974
- Generation and Distribution of Dislocations by Solute DiffusionJournal of Applied Physics, 1961