High-power cw operation of InGaAs/GaAs surface-emitting lasers with 45° intracavity micro-mirrors
- 21 October 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (17) , 2085-2087
- https://doi.org/10.1063/1.106140
Abstract
High‐power cw operation of horizontal‐cavity, monolithic InGaAs/GaAs surface‐emitting lasers with all dry etched micro‐mirrors has been demonstrated for the first time. The 45° and 90° micro‐mirrors of the devices were fabricated by ion‐beam etching and reactive ion etching techniques, respectively. Threshold‐current densities of less than 500 A/cm2, external differential quantum efficiencies of 10% (0.12 W/A) from the emitting facet, and output powers in excess of 100 mW were achieved from uncoated devices driven under cw operation.Keywords
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