Ultraviolet-induced defect creation in amorphous SiO2 exposed to an O2 plasma

16 April 1990

journal article
conference paper
Published by AIP Publishing in Applied Physics Letters

Vol. 56 (16) , 1549-1551
https://doi.org/10.1063/1.103214

Abstract

The creation of paramagnetic defects in plasma chemical vapor deposited amorphous SiO₂ exposed to a rf oxygen plasma has been studied as a function of exposure time for two plasma power densities. Unpaired Si dangling bond defects (oxygen‐vacancy or oxygen‐vacancy like) have been observed in densities attaining ∼4×10¹⁷ cm⁻³ after more than 20 min exposure. These defect levels are equivalent to 10 Mrad of ⁶⁰ Co γ radiation. Ultraviolet photons in the wavelength range 250≤λ≤300 nm are shown to be responsible for the defect creation. The 130 nm O* emission is found not to be important.

Keywords

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