Chemically assisted ion beam etching process for high quality laser mirrors
- 31 May 1989
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 9 (1-4) , 485-489
- https://doi.org/10.1016/0167-9317(89)90106-8
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Nonselective etching of GaAs/AlGaAs double heterostructure laser facets by Cl2 reactive ion etching in a load-locked systemApplied Physics Letters, 1987
- GaAs/AlGaAs ridge waveguide laser monolithically integrated with a photodetector using ion beam etchingElectronics Letters, 1987
- High-power etched-facet lasersElectronics Letters, 1987
- Chemically enhanced focused ion beam etching of deep grooves and laser-mirror facets in GaAs under Cl2 gas irradiation using a fine nozzleApplied Physics Letters, 1987
- Short cavity GaAs/AlGaAs multiquantum well lasers by dry etchingApplied Physics Letters, 1986
- High-power ridge-waveguide AlGaAs GRIN-SCH laser diodeElectronics Letters, 1986
- The thermal and ion-assisted reactions of GaAs(100) with molecular chlorineJournal of Vacuum Science & Technology B, 1986
- A new chemical etching technique for formation of cavity facets of (GaAl)As lasersIEEE Journal of Quantum Electronics, 1985
- Large area ion beam assisted etching of GaAs with high etch rates and controlled anisotropyJournal of Vacuum Science & Technology B, 1983